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BCP29, BCP49
NPN Silicon Darlington Transistors For general AF applications High collector current High current gain Complementary types: BCP28/48 (PNP)
4
Type BCP29 BCP49
Maximum Ratings Parameter
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 C Junction temperature Storage temperature

3 2
C(2,4)
B(1)
1
VPS05163
E(3)
EHA00009
Marking BCP 29 BCP 49 1=B 1=B
Pin Configuration 2=C 2=C 3=E 3=E 4=C 4=C
Package SOT223 SOT223
Symbol VCEO VCBO VEBO
BCP29 30 40 10
BCP49 60 80 10
Unit V
IC ICM IB IBM Ptot Tj Tstg
500 800 100 200 1.5 150 -65 ... 150
mA mA
W C
Thermal Resistance Junction - soldering point1) RthJS
17
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-29-2001
BCP29, BCP49
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base breakdown voltage IC = 100 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 VCB = 60 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 C VCB = 60 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 5 V, IC = 0 DC current gain 1) IC = 100 A, VCE = 1 V DC current gain 1) IC = 10 mA, VCE = 5 V DC current gain 1) IC = 100 mA, VCE = 5 V DC current gain 1) IC = 500 mA, VCE = 5 V BCP29 BCP49
1) Pulse test: t 300s, D = 2%
Unit max. V
typ.
V(BR)CEO BCP29 BCP49 V(BR)CBO BCP29 BCP49 V(BR)EBO ICBO BCP29 BCP49 ICBO BCP29 BCP49 IEBO hFE BCP29 BCP49 hFE BCP29 BCP49 hFE BCP29 BCP49 hFE 4000 2000 20000 10000 10000 4000 4000 2000 10 10 100 100 100 40 80 10 30 60 -
nA
A
nA -
2
Nov-29-2001
BCP29, BCP49
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter saturation voltage1) IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Ccb 6.5 fT 200 VBEsat 1.5 VCEsat 1 typ. max.
Unit
V
MHz pF
1) Pulse test: t 300s, D = 2%
3
Nov-29-2001
BCP29, BCP49
Total power dissipation Ptot = f(TS)
Collector cutoff current ICBO = f (T A) VCB = V CEmax
10 4
BCP 29/49 EHP00251
1650
mW
CBO
1350 1200
nA max
10 3
P tot
1050 900 750 600 450 300 150 0 0
10 2 typ 10 1
10 0
15 30 45 60 75 90 105 120
C 150 TS
0
50
100
C TA
150
Transition frequency fT = f (IC) VCE = 5V
10 3 fT
BCP 29/49 EHP00252
Permissible pulse load Ptotmax / PtotDC = f (tp)
10 3 Ptot max 5 Ptot DC
BCP 29/49 EHP00253
MHz
D=
tp T
tp T
10 2 5
10 2
5
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1 10 0
10 1
10 2
mA
10 3
10 0 10 -6
10 -5
10 -4
10 -3
10 -2
s tp
10 0
C
4
Nov-29-2001
BCP29, BCP49
DC current gain hFE = f (IC ) VCE = 5V
10 6 h FE 5
BCP 29/49 EHP00255
Collector-emitter saturation voltage IC = f (VCEsat), h FE = 1000
10 3
BCP 29/49 EHP00256
C
mA 150 C 25 C -50 C
10 5 5
125 C 25 C
10 2 5
-55 C 10 4 5
10 1 5
10 3 10 -1
10 0
10 1
10 2 mA 10 3
10 0
0
0.5
1.0
V V CEsat
1.5
C
Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO )
BCP 29/49 EHP00257
Base-emitter saturation voltage IC = f (VBEsat), hFE = 1000
BCP 29/49 EHP00258
10 CEB0 (CCB0 )
10 3
pF
C
mA 150 C 25 C -50 C
10 2
CCB0 5 CEB0
5
10 1 5
0 10 -1
10 0
V
10 1 V EB0 (V CB0 )
10 0
0
1.0
2.0
V V BEsat
3.0
5
Nov-29-2001

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